Controlled strained layer epitaxial growth of EuTiO3 on buffered silicon

In this work, we show the epitaxial growth of (111)-oriented EuTiO3 thin films on (001)-oriented silicon with an in situ grown yttria-stabilized zirconia (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction measurements revealed a homogeneously strained film strain dependency fluence during growth. From magnetization vs temperature measurements, confirmed that have antiferromagnetic to ferromagnetic transition at 3.7 K, which disappeared for unstrained films. Furthermore, used electron backscatter analyze columnar YSZ, showed four in-plane orientations.